The relentless pursuit of higher transistor density has brought electronic devices to the brink of atomic-scale limits, resulting in increased energy dissipation and leakage currents that undermine energy efficiency. To overcome these challenges, researchers are exploring alternative physical variables beyond charge-based electronics, with electron spin emerging as a promising candidate for next-generation low-power, high-performance computing technologies. Spintronic devices rely on materials capable of efficient spin transport and manipulation. In this study, we demonstrate robust spin transport in cadmium arsenide (Cd₃As₂) films at room temperature, marking a significant advancement toward practical spintronic applications.
We report the operation of a nonlocal spin valve (NLSV) based on Cd₃As₂ up to 300 K, confirming its viability as a spin channel. The device architecture features Ni₈₀Fe₂₀ ferromagnetic contacts separated by a Cd₃As₂ channel, interfaced with hybrid MgO/fluorographene tunnel barriers to ensure efficient spin injection and detection. At 3 K, the NLSV exhibits a maximum nonlocal resistance change of 0.4 Ω at a bias current of −10 μA, which diminishes but remains detectable at room temperature with a signal of approximately 0.05 Ω under a +25 μA bias. This performance exceeds that observed in silicon-based NLSVs by an order of magnitude and demonstrates the potential for real-world implementation.
Further insight into spin dynamics is provided by inverse spin Hall effect (ISHE) measurements. By applying a charge current along the Hall bar geometry, a spin current is generated via the spin Hall effect, which is then converted back into a measurable voltage through ISHE. Fitting the Hanle precession data yields a spin diffusion length of 11 μm, with values extending up to 40 μm in some cases—among the longest reported for any material system.HP1α Antibody supplier Notably, the spin Hall angle reaches SH = 1.SOCS-1 Antibody supplier 5 at low current densities, indicating highly efficient spin-to-charge conversion.PMID:35123544 These values rival those seen in topological insulators and surpass conventional metals like Au or Pt.
Temperature-dependent studies reveal that while the spin signal weakens with increasing temperature, it persists up to 50 K, suggesting intrinsic spin coherence even at ambient conditions. The stability of the spin diffusion length across different bias currents, averaging 12 ± 2 μm, further supports the robustness of spin transport. Anomalous peaks at −10 μA suggest possible enhancements in spin polarization due to reduced electron-electron scattering at low current levels.
To rule out spurious signals, we performed comprehensive controls: standard magnetoresistance measurements confirmed the absence of weak antilocalization; geometric scaling experiments eliminated contributions from ohmic leakage; and temperature-dependent behavior ruled out the bypass and quasiballistic effects. All evidence points conclusively to a genuine spin Hall origin of the observed signals.
In conclusion, Cd₃As₂ emerges as a leading candidate for room-temperature spintronic platforms due to its long spin diffusion lengths, high spin Hall angles, and compatibility with scalable fabrication techniques. Its three-dimensional Dirac semimetal nature enables strong spin-orbit coupling and tunable spin relaxation through gating, offering unprecedented control over spin degrees of freedom. These findings lay a solid foundation for future spin-based logic and memory devices operating efficiently at room temperature.MedChemExpress (MCE) offers a wide range of high-quality research chemicals and biochemicals (novel life-science reagents, reference compounds and natural compounds) for scientific use. We have professionally experienced and friendly staff to meet your needs. We are a competent and trustworthy partner for your research and scientific projects.Related websites: https://www.medchemexpress.com